Journal of Crystal Growth, Vol.506, 190-200, 2019
Early history of MOVPE reactor development
MOVPE technology has rapidly grown from a laboratory research novelty in the 1960's to the dominant production method for epitaxial materials used in high-performance compound semiconductors devices. In order for MOVPE to be adopted as an efficient and high-yield process, the MOVPE reactor had to be designed and operated in a manner to produce uniform epitaxial layer structures with a high degree of controllability and reproducibility. In commemoration of 50 years of MOVPE technological advancement, this paper reviews the early history of MOVPE reactor development and foundational advances that were critical for development of multi-wafer capacity production reactors having high yield and reproducibility.
Keywords:Transport phenomena;Metalorganic vapor phase epitaxy;Reactor design;Semiconducting III-V materials