Journal of Materials Science, Vol.54, No.2, 1452-1461, 2019
Structural and dielectric properties of ion beam deposited titanium oxynitride thin films
Titanium oxynitride on the microstructure and dielectric behavior of the films were analyzed. The results show that increasing O content made the films to turn from fcc-TiN (111)-oriented to fcc thin films. The increase in oxygen content leads to the red-shift of plasmonic resonant frequency and makes the films more dielectric. Higher films more metallic. Atomic composition is an important factor underlying the results. The study provides a method to control the plasmonic properties of oxynitride films in a wide range by atomic composition and assisting ions.