Achieving high brightness (where brightness is defined as optical power per unit area per unit solid angle) in semiconductor lasers is important for various applications, including direct-laser processing and light detection and ranging for next-generation smart production and mobility. Although the brightness of semiconductor lasers has been increased by the use of edge-emitting-type resonators, their brightness is still one order of magnitude smaller than that of gas and solid-state/fibre lasers, and they often suffer from large beam divergence with strong asymmetry and astigmatism. Here, we develop a so-called 'double-lattice photonic crystal', where we superimpose two photonic lattice groups separated by one-quarter wavelength in the x and y directions. Using this resonator, an output power of 10 W with a very narrow-divergence-angle (< 0.3 degrees) symmetric surface-emitted beam is achieved from a circular emission area of 500 mu m diameter under pulsed conditions, which corresponds to a brightness of over 300 MW cm(-2) sr(-1). In addition, an output power up to similar to 7 W is obtained under continuous-wave conditions. Detailed analyses on the double-lattice structure indicate that the resonators have the potential to realize a brightness of up to 10 GW cm(-2) sr(-1), suggesting that compact, affordable semiconductor lasers will be able to rival existing gas and fibre/disk lasers.