We report plasma based fabrication of an optoelectronic device with plasmon enhanced infrared sensitivity realized by integrating plasmonic gold nanoparticles (Au NPs) with an organic semiconductor matrix. A blend of plasma polymerized aniline (PPA)-Rubrene, prepared by a novel plasma based method acts as the semiconductor matrix for charge transport in the device geometry. Significantly improved photovoltaic property of the device with an open circuit voltage (V-OC) of 1.08V is obtained with the addition of Au NPs in the device. We experimentally demonstrate very efficient plasmon generated charge transfer between Au NPs and PPA-Rubrene system leading to significant enhancement of infrared responsivity of 2200% at the plasmon absorption band of Au. This study demonstrates how plasma based processes can be utilized to prepare plasmonic nano-materials and also to synthesize organic semiconductor materials suitable for development of plasmonic charge generating devices responsive to infrared region of the electromagnetic spectrum.