Passivation quality of poly-Si contacts with different phosphorus doping concentration were investigated in this study. Intrinsic poly-Si layers were deposited by LPCVD on a tunnel oxide surface, followed by n + poly-Si doping and hydrogenation. For lightly doped poly-Si contacts with phosphorus concentration of 2.1 x 10(19) cm(-3), higher temperatures and longer times increased iV(oc) achieving maximum value of 734 mV, as poly-Si grain size increases from 13 nm to 40 nm. However, for heavily doped poly-Si contacts with phosphorus concentration of 1.1 x 10(20)cm(-3), iV(oc) decreased from 731 mV to 696 mV as annealing time increased from 10 to 60 min because Auger recombination rate increased from 9.3 fA/cm(2) to 21.6 fA/cm(2) as phosphorus in-diffusion occurs. The contact resistance of poly-Si contacts was also investigated to achieve a high fill factor. Finally, a poly-Si/SiOx/c-Si passivated contact solar cell using a poly-Si contact on the back and boron diffused emitter on the front was fabricated. As a result, high efficiency of 21.1% solar cell was achieved with V-oc of 665 mV, J(sc) of 40.6 mA/cm(2), and fill factor of 78.3%.