화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Journal of Industrial and Engineering Chemistry, Vol.73, 214-220, May, 2019
DOI10.1016/j.jiec.2019.01.027  Export Citation
Control of tunneling gap between nanocrystals by introduction of solution processed interfacial layers for wearable sensor applications
Md Ashraf Hossain, Sanghyun Jeon, Junhyuk Ahn, Hyungmok Joh, Junsung Bang, and Soong Ju Oh†
  • Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
E-mail:
In this study, we introduce a strategy to introduce solution-processed interfacial layers in nanocrystal (NC) thin films to fabricate high-performance strain sensors. SiO2 interfacial layers are chemically introduced in ligand-exchanged Ag NC thin films to increase the tunneling gap or inter-particle distance between each Ag NC. In this way, the charge-transport mechanism is manipulated, leading to unique electromechanical properties with a high gauge factor. All solution-processed strain gauge sensors with high stability, durability, and sensitivity are fabricated. The sensor successfully measured delicate movements such as finger motions, demonstrating its possible application in electronic skin.
Keywords:Silver nanocrystal;Tunneling gap;SiO2 interfacial layers;Solution process;Strain sensor
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