Copper oxide thin films were deposited by a reactive high power impulse magnetron sputtering (r-HIPIMS) on glass substrates with a SnO2:F (FTO) layer. The pulse magnetron discharge was analyzed via the radio frequency (RF) Sobolewski probe, used for the time-resolved measurement of ion flux density on the substrate. Pulsed discharge current and voltage waveforms were analyzed. It was found that the pulse magnetron discharge worked in a self-sputtering mode with a stable or slightly growing discharge current after pulse discharge stabilization. As-deposited copper oxide films exhibited a certain degree of crystallinity, as identified by XRD, which was further improved after postdeposition annealing at 550 degrees C in the air. After annealing, the mixture of CuO and Cu2O crystallites was usually found in the films and in a few cases CuO0.96 phase was detected. Deposited films exhibited a p-type conductivity and relatively high photocurrents in the cathodic region after the postdeposition annealing. The highest photocurrent density of i(p) approximate to 1.1 mA cm(-2) at potential -500 mV vs. Ag/AgCl was detected for films with a thickness of 1200 nm.