We investigated the dynamical stability, electronic and thermoelectric properties of the ZnFeTiSi Heusler compound by combining the first-principles calculations and semi-classical Boltzmann transport theory. The phonon dispersion indicates the dynamical stability and the calculated formation energy is negative which confirm the stability of ZnFeTiSi in the Heusler structure. The calculated electronic structures show that ZnFeTiSi is a semiconductor with an indirect band gap of about 0.573 eV using GGA and 0.643 eV by mBJ-GGA potentials at equilibrium lattice parameter (5.90 angstrom). Seebeck coefficient, electrical conductivity and electronic thermal conductivity were calculated to describe the thermoelectric properties of the ZnFeTiSi compound. It is found that it exhibits high Seebeck coefficient and power factor, making it promising for future thermoelectric applications.