화학공학소재연구정보센터
Journal of Crystal Growth, Vol.518, 14-17, 2019
High-efficiency AlInSb mid-infrared LED with dislocation filter layers for gas sensors
To fabricate low-consumption and high-resolution gas sensors, especially for methane (CH4) gas (which has absorption around wavelength of 3.3 mu m), mid-infrared LEDs are required. Accordingly, to reduce Shockley Read Hall recombination and achieve high luminous intensity at 3.3 mu m, an AlxIn1-xSb LED with dislocation filter layers was developed. Dislocation density of the active layer was significantly reduced from 3.5 x 10(8) to 1.1 x 10(8)/cm(2), and luminous efficiency was doubled compared to that of conventionally structured LEDs. To our knowledge, emission intensity at 3.3 mu m under injection current of 100 mA is the highest of any commercial LEDs.