The large-area seeding concept was applied for Float-zone (FZ) growth of monocrystalline silicon, without the common Dash-technique for elimination of dislocations. Using large-seeding avoids the need for growth of a crystal cone with a smaller diameter than the wafer size. Crystals with 4 in. diameter and 120 mm length were grown using a modified FZ set-up. Numerical simulation was used to minimize thermal stress down to levels that allow monocrystalline growth. The characterization of grown material revealed a monocrystalline region above the seed but polycrystalline growth when increasing crystal length. This is in agreement with the numerical results that showed higher thermal stress at increased crystal length.