In this study, the effects of three different types of doping elements on the thermoelectric properties, mechanical properties and thermal stability of Zr(0.95)A(0.05)NiSn (A=p-type dopant: Sc; isoelectronic dopants: Zr, Ti and Hf; n-type dopants: V, Nb and Ta) were systematically investigated. The sample was prepared by smelting multiple magnetic suspensions in combination with the spark plasma sintering method. X-ray diffraction analysis and scanning electron microscopy observations showed that nearly single-phase half-Heusler compounds were obtained for the levitation-melted ingots. The results demonstrate that p-type doping causes the semiconductor behavior of this material to change from n type to p type, resulting in poor thermoelectric properties. The mass fluctuations and stress fluctuations introduced by the isoelectronic doping cause the thermal conductivity to decrease, and n-type dopants increase the carrier concentration of the material, resulting in an increase in its power factor. On this basis, the ZT(max) value of the Zr0.95M0.05NiSn (M=Ti0.25Hf0.25Nb0.25V0.25) sample reached 0.76, which is 58% higher than that of ZrNiSn within the measurement temperature range. In addition, all of the samples maintained excellent mechanical properties, and their microhardness (HV) was greater than 900; no significant endothermic or exothermic phenomenon of all these samples was observed from room temperature to 700 degrees C, confirming their good thermal stability.