화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.166, No.8, B618-B622, 2019
Effect of Ambient Oxygen Partial Pressure on the Hydrogen Response of SnO2 Semiconductor Gas Sensors
In this study, the influence of the oxygen partial pressures (PO2) on the sensor response to H-2 of SnO2 resistive-type gas sensors was evaluated under various humid atmospheres. SnO2 nanoparticles of 8-15 nm in diameter were synthesized using a hydrothermal technique followed by calcination at 600 degrees C. Additionally, a large amount of pores with diameters greater than 10 nm was confirmed in the nanoparticles. The electrical resistance at 350 degrees C was decreased with decreasing the P-O2, and the electrical resistance in the presence of 10 ppm H-2 was much smaller than that in the absence of H-2 in both dry and humid atmospheres regardless of the P-O2. Furthermore, the sensor response to 10 ppm H-2 at 350 degrees C increased with decreasing P-O2 in both dry and humid atmospheres. Thus, decreasing the amount of oxygen adsorption enhanced the effect of rooted hydroxyl formation on the SnO2 surface through a combustion reaction between H-2 and adsorbed oxygen and improved the sensor response to H-2. These results are important for understanding the fundamental mechanisms of gas detection and for the material surface design of highly sensitive resistive-type semiconductor gas sensors. (C) 2019 The Electrochemical Society.