Solution-processed zinc-tin oxide (ZTO) thin-film transistors (TFTs) were prepared using an electro-hydrodynamic (EHD) jet printer with different patterning methods, line patterns and direct patterns with mask. The printing parameters were optimized to obtain suitable patterns and mask effects in the printing process with a low viscosity precursor solution. The electrical properties of the EHD jet-printed ZTO show a mobility of 7.0 cm(2)/Vs, a threshold voltage of 7 V, and a subthreshold slope of 0.4 V/dec. The gate leakage current can be reduced by minimizing the overlap of active layer with source and drain electrodes without patterning the gate electrode because the patterning of the active layer more effectively controlled the gate leakage current. Blocking oxygen by passivation is the key to protect the threshold voltage shift under positive bias stress.