화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Journal of Industrial and Engineering Chemistry, Vol.77, 470-476, September, 2019
DOI10.1016/j.jiec.2019.05.013  Export Citation
Rapid growth of NiSx by atomic layer infiltration and its application as an efficient counter electrode for dye-sensitized solar cells
Sangho Cho1, 2, Hongbum Kim3, and Myung Mo Sung3, †
  • 1Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
  • 2Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, Republic of Korea
  • 3Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
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Nickel sulfide (NiSx) was grown by atomic layer infiltration using bis(dimethylamino-2-methyl-2- butoxo)nickel(II) [Ni(dmamb)2] and hydrogen sulfide (H2S) as a metal precursor and a sulfur source. The steady-state growth rate of the film was 3.7 A/cycles at 160-190 °C which was much faster compared to those by conventional atomic layer deposition method (<0.7 A/cycles). This nickel sulfide thin films were characterized by taking X-ray photoelectron spectroscopy, scanning electron microscopy, X - ray diffraction, and hall measurements. The deposited films on Si wafer was single-phase polycrystalline with multiple domains. The NiSx film grown on fluorine-doped tin oxide (FTO)-coated glass was applied to a counter electrode in dye-sensitized solar cells, which performed a high catalytic activity for the reduction of I3 - to I- and the comparable cell efficiency of 7.12% with cells using conventional Pt-coated FTO counter electrode.
Keywords:Atomic layer infiltration;Nickel sulfide;Counter electrode;Dye-sensitized solar cell
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