Previous Article Next Article Table of Contents Journal of the American Chemical Society, Vol.118, No.18, 4490-4491, 1996 DOI10.1021/ja9538795 Export Citation Conduction and Valence-Band Edges of Porous Silicon Determined by Electron-Transfer Rehm JM, Mclendon GL, Fauchet PM Please enable JavaScript to view the comments powered by Disqus.
