Thin film solar cells with ITO/ZnO/P3HT:PCM:CTSe NCs/Ag structure were fabricated employing a fast and cost-effective procedure using blended solution of P3HT:PCBM:CTSe NCs deposited by spin casting, followed by thermal annealing steps. The CTSe NCs are prepared via solvothermal method. An inverted architecture of device with structure ITO/ZnO/P3HT: PCBM:CTSe NCs/Ag have been fabricated with different concentration of CTSe NCs in poly(3-hexyle thiophene) (P3HT): [6,6]phenyl-C61-butyric-acid-methyl-ester (PCBM) matrix. The effect of CTSe NCs on the performance of hybrid solar cell with optimized blend ratio of P3HT:PCBM and CTSe NCs has been investigated for optimum power conversion. The charge carrier extraction and recombination at the interface of donor-acceptor material were studied using Electrochemical impedance spectroscopy (EIS) under dark condition. EIS study has demonstrated that the charge transfer rate was higher for the device having optimized wt% of CTSe NCs (10 wt%) in P3HT:PCBM active layer. A significant improvement in the device performances was observed on incorporation of CTSe NCs. The device exhibited open circuit voltage (V-oc) of 0.475 V, short circuit current density (J(sc)) of 6.95 mA/cm(2), fill factor (FF) of 0.41 and power conversion efficiency (PCE) of 1.35%.