Of the photoanode in QDSSC, the TiCl4 solution treatment is widely used in mesoporous TiO2 surface modification. However, device performance amplification and electron transfer capability improvement of the two common pre- or post treatment are seldom yet. In this work, we explore the TiCl4 different treatments based on the typical TiO2 nanowire array photoanode for CdSxSe1-x QDSSC. In terms of the changes of electron transfer pathway, flat-band potential (V-fb) and charge carrier concentration (N-D), we explored the inducement and increase of electron transfer capability and efficacy under different treatments. As for the influence of device performance, the more negative V-fb (-0.315 V, NHE) and higher N-D (7.63 x 10(19) cm(-3)) of PBS are beneficial to the increase of open-circuit voltage (V-oc) and short-circuit current (J(sc)). Therefore, the TiCl4 pre-treatment on photoanode modification (in PBS) is beneficial to reduce the resistances of charge transfer and recombination. The cell performance of PBS in CdSxSe1-x QD sensitization was improved significantly: the PCE was 7.54%, the J(sc) was 18.93 mA/cm(2), V-oc was 0.78 V and fill factor (FF) was 51.1%.