Photoelectric properties of the planar ITO/MoO3/DBP/PTCBI/BCP/Ag system were characterized on the basis of short-circuit current, open-circuit voltage and absorption spectra, and current-voltage measurements in the dark and under monochromatic illumination of low intensity. Photovoltaic performance of the system was compared with the performance of ideal semiconductor and excitonic cells of chosen bandgaps. Such analysis shows, that the fabricated cell exhibits quite high value of the open-circuit voltage, in comparison to the SQ limits calculated for semiconductor devices of bandgaps close to the LUMOPTCBI-HOMODBP offset or crystalline silicon cells of the same absorptivity. This confirms that the DBP/PTCBI junction exhibits good properties for conversion of exciton energy to chemical energy of electron-hole pair. Moreover, open-circuit voltage and short-circuit current of the investigated cell practically do not change within the 520 nm-620 nm range, for which they reach the maximum values, making the junction of DBP/PTCBI attractive for use in indoor photovoltaics.