We report in detail the effects of varying the concentration of indium as a dopant in ZnO on the structural, vibrational, and optical properties of ZnO nanowires. A highly versatile route to dope zinc oxide nanowires by using vapor- liquid-solid growth is employed. It is observed that the ratio of indium in ZnO reactant has a large impact on properties of indium-doped ZnO nanowires. Lower indium concentration reveals better transparency while higher concentrations of indium shows segregation of indium-rich domains within the doped nanocrystals. Photoluminescence measurements demonstrated band gap tuning and a smaller UV to deep emission ratio for doped nanowires. Phonon vibrational modes along with origin of observed anomalous vibrational modes induced due to incorporation transmittance of more than 90% is observed for a wide range of spectra in both visible and in ZnO are discussed. An average near-IR regions as compared with indium tin oxide. The lowest resistivity of 1.2 x 10(-3) Omega.cm was achieved for ZnO films doped with 7% indium oxide. These dramatically superior optical and electrical properties make it a superior candidate for various technological applications.