The Investigations on the growth of InxGa1-xN thin films on silicon (100) substrate at different temperatures via nitridation of the deposited indium gallium oxide. The estimation from X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) studies clearly shows the presence of indium rich content of about 30% in the grown InxGa1-xN thin films. The A(1)(LO) phonon peak in micro-Raman scattering at 670cm(-1) correlates that the films are crystallized in the characteristic wurtzite structure. In the photoluminescence measurement a broad spectrum has been observed. The carrier concentration and mobility of InxGa1-xN thin film is evaluated to be 1.71 x 10(17)cm(-3) and 135 cm(2)V(-1)s(-1). From the obtained results, it is suggested that the preparedlndium rich InxGa1-xN thin film can be used for the realisation of hetro-structure solar cell on Si substrates.