Solar cells are the most encouraging sustainable power source assets causing a huge demand for solar installations globally. Despite huge demand, there is the weakening of electrical attributes after some time in solar cells because of various internal and external parameters which requires certain adjustments. Potential induced degradation (PID) is one such phenomenon that detrimentally affects the electrical output parameters, and impacts the reliability of solar cells. In this paper, triggering of PID is simulated for Thin film solar cells (TFSCs) with distinct absorber layers using the one dimensional Solar cell Capacitance Simulator (SCAPS-1D) simulation program. The impact of PID on the electrical parameters and overall performance characteristics is explained by considering changes in the defect states in various semiconductor layers. The defect states are modeled in the semiconductor layers and at the interfaces appropriately. The grading profiles are also varied for a detailed analysis of thin film solar cells, and a thorough analysis of the decline of parameters is also done. The study of quantum efficiency and energy band diagrams are additionally carried out. Simulations are performed in SCAPS-1D simulation program along with graphical calculations realized in the MATLAB software.