A new version of the PREDICT process model has been developed which updates many of the existing models with new data describing metal silicide formation and dopant redistribution. The new program also incorporates several novel features, not previously included as part of a process modeling program : (i) silicide resistivity as formed, after ion implantation, and after agglomeration, (ii) roughening of the silicide/silicon interface, and (iii) profile convolution routines to account for secondary ion mass spectroscopy cascade mixing and silicide roughening. The latter algorithms provide a bridge so that experimental data can be compared to model predictions.