Compositionally uniform (in depth and in lateral position) chemically vapor deposited WSichi films were deposited on 200 mm Si wafers in a single-wafer reactor using SiH2Cl2/WF6 chemistry. A process window was found to produce highly uniform compositions in the range of 2.2 less than or equal to chi less than or equal to 2.6, regardless of the nucleation surface, SiO2 or poly-Si. 900 degrees C annealing in N-2 of such films deposited on P-doped poly-Si resulted in a uniform reduction of chi to a value of 2.1 to 2.2. In contrast, as deposited dichlorosilane-WSichi films which are Si-poor at the interface, were found to develop a high concentration of Si in the middle layer of the annealed structure. The as-deposited resistivity was found to increase linearly with chi with a value of similar to 750 mu Omega . cm for chi approximate to 2.5. Upon annealing, the resistivities decreased to values in the range of 80 to 110 mu Omega . cm. The as-deposited films were predominantly in the hexagonal. structure of WSi2, which transformed to the tetragonal structure upon annealing at temperatures higher than 600 degrees C. As-deposited stresses were in the range of (1.3 to 1.6) . 10(10) dyne/cm(2), and upon annealing reduced to similar to 1 . 10(10) dyne/cm(2). The films had a very good step coverage even at high aspect ratios and did not crack or peel off upon annealing. The films contained relatively low levels of impurities : F similar to 6 . 10(16) to 2 . 10(17) and Cl similar to 5 . 10(17) to, 1 . 10(19) atom/cm(3). This systematic study reviews the correlations between the structural, compositional, mechanical, and electrical properties of the as-deposited and the annealed silicide films.