The correlation between minority carrier lifetime and deep-level transient spectroscopy measurements was used in order to obtain more information about the mechanisms of defect formation and annealing in CZ and FZ silicon during high temperature heating by lamp. Different energy levels induced by lamp annealings were detected : a good correlation with the lifetime behavior was observed for a donor at E(V) + 0.29 eV No direct influence of the oxygen content was detected at 1050-degrees-C, while at 750-degrees-C a gettering action of oxygen aggregates can be hypothesized.