A process consisting of the deposition of amorphous silicon at low temperatures and subsequent annealing has been proposed for fabricating a boron-doped polycrystalline silicon film with a low resistivity. This process realized large grain growth up to 3 to 5 mum, leading to a low resistivity of 1.4 mOMEGA . cm, which one-half to about one-third compared with that of direct deposited boron doped polysilicon. In addition to this, extremely low deposition temperature (approximately 350-degrees-C) using a Si2H6/B2H6 mixture attained uniform boron concentration across the wafers.