This paper discusses boron doping using metal oxide semiconductor structure (poly-Si/SiO2/Si). The thin SiO2 layer acts as a stopper to poly-Si removal after doping. When boron implantation is used for poly-Si doping, shallow boron-doped layers suitable for base application can be formed by wet O2-ambient drive-in. When BF2 implantation is used, shallow boron-doped layers can be formed even by N2-ambient drive-in. The surface boron concentration of boron-doped layers increases with dose and saturates, since boron concentration in poly-Si in the region near the interface with SiO2 also increases with dose and saturates. An estimate of the boron diffusion coefficient in SiO2, D(ox), shows that it increases by about one order of magnitude both for boron implantation with subsequent wet O2-ambient drive-in and for BF2 implantation with subsequent N2-ambient drive-in.