The oxidation of In-48Sn was investigated at partial pressures between 10(-8) and 10(+4) Pa over the temperature range from 22 to 250-degrees-C with different analytical methods. The oxide film contains a mixture of several oxides, although indium oxide forms preferentially. The measurements show at the surface an excess of indium compared to the eutectic composition. Below the melting point, a logarithmic growth, and above this point, a parabolic growth of the oxide film was observed. The oxide film formed in air at 250-degrees-C does not exceed about 50 nm in the first 5 min of oxidation.