Direct-patterned copper/poly(ethylene oxide) composite electrodes for organic thin-film transistors through cone-jet mode by electrohydrodynamic jet printing

Xinlin Li; Hyeok-jin Kwon; Xue Qi; Ho Kwang Choi; Sooman Lim; Tae-Wook Kim; Se Hyun Kim

Journal of Industrial and Engineering Chemistry, Vol.85, 269-275, May, 2020

DOI10.1016/j.jiec.2020.02.009 Export Citation

Direct-patterned copper/poly(ethylene oxide) composite electrodes for organic thin-film transistors through cone-jet mode by electrohydrodynamic jet printing

Xinlin Li^{1, 2}, Hyeok-jin Kwon³, Xue Qi⁴, Ho Kwang Choi^{4, 5}, Sooman Lim^{4, 5, †}, Tae-Wook Kim^{4, †}, and Se Hyun Kim^{2, 6, †}

¹College of Electromechanical Engineering, Qingdao University, Qingdao 266071, China
²School of Mechanical Engineering Science, Yeungnam University, Gyeongsan 38541, Republic of Korea
³Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
⁴Graduate school of Flexible and Printable Electronics, Chonbuk National University, Jeonju 54896, Republic of Korea
⁵Department of Flexible and Printable Electronics, LANL-CBNU Engineering Institute-Korea, Chonbuk National University, Jeonju 54896, Republic of Korea
⁶School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea

E-mail:, ,

Direct-patterned Cu-based conductive electrodes were printed through electrohydodynamic (EHD) jet printing via cone-jet mode. The introduction of a capping agent in the synthesis of the Cu ink limited excessive conductivity, which enabled the pristine Cu ink to achieve the various printing modes of EHD jet printing: dripping, micro-dripping, cone-jet, and multi-jet. We also obtained optimal printing conditions by adjusting the viscosity by adding poly(ethylene oxide) (PEO) to the pristine Cu inks, resulting in well-defined printing patterns. The optimized PEO content in the ink was determined to be ~10 wt%, which gave us a stable cone-jet mode and well-defined Cu/PEO composite electrode lines with sharp edges. We utilized the Cu/PEO composite electrode lines as source and drain and a triisopropylsilylethynyl (TIPS).pentacene/PS blend as the active layer for bottom-gate bottom contact organic field-effect transistors (OFETs). The resulting devices exhibited an average field-effect mobility (μFET), threshold voltage (Vth), and on/off current ratio (Ion/Ioff) of 0.253 cm2/V, 0.253 V, and ~10 6, respectively.

Keywords:Cu nanoplates;Capping agent;Cu/poly(ethylene oxide) composite;Printed electronics;Electrohydrodymic jet printing;Organic field-effect transistors

[References]

Venugopal G, Kim SJ, Nanolithography, 187 (2013).
Dang MC, Dang TMD, Fribourg-Blanc E, Adv. Nat. Sci. Nanosci. Nanotechnol, 4, 015009 (2013)
Raut NC, Al-Shamery K, J. Mater. Chem. C, 6, 1618 (2018)
Singh M, Haverinen HM, Dhagat P, Jabbour GE, Adv. Mater., 22(6), 673 (2010)
Park JU, Hardy M, Kang SJ, Barton K, Adair K, Mukhopadhyay DK, Lee CY, Strano MS, Alleyne AG, Georgiadis JG, Ferreira PM, Rogers JA, Nat. Mater., 6, 782 (2007)
Kim K, Kim G, Lee BR, Ji S, Kim SY, An BW, Song MH, Park JU, Nanoscale, 7, 13410 (2015)
Kim SY, Kim K, Hwang YH, Park J, Jang J, Nam Y, Kang Y, Kim M, Park HJ, Lee Z, Choi J, Kim Y, Jeong S, Bae BS, Park JU, Nanoscale, 8, 17113 (2016)
Li X, Jeong YJ, Jang J, Lim S, Kim SH, Phys. Chem. Chem. Phys., 20, 1210 (2018)
Maktabi S, Chiarot PR, J. Appl. Phys., 120, 084903 (2016)
Cloupeau M, J. Aerosol Sci., 25, 1143 (1994)
Bae J, Lee J, Kim SH, J. Appl. Polym. Sci., 134, 45044 (2017)
Li X, Kim K, Oh H, Moon HC, Nam S, Kim SH, Org. Electron., 69, 190 (2019)
Cui Z, Han Y, Hunag Q, Dong J, Zhu Y, Nanoscale, 10, 6806 (2018)
Samarasinghe SR, Pastoriza-Santos I, Edirisinghe MJ, Reece MJ, Liz-Marzan LM, Gold Bulletin, 39, 48 (2006)
Niittynen J, Sowade E, Kang H, Baumann RR, Mantysalo M, Sci. Rep., 5, 8832 (2015)
Ye S, Stewart IE, Chen Z, Li B, Rathmell AR, Wiley BJ, Accounts Chem. Res., 49, 442 (2016)
Wei C, Liu Q, Cryst. Eng. Comm., 19, 3254 (2017)
Ajitha B, Reddy YAK, Reddy PS, Jeon HJ, Ahn CW, RSC Adv., 6, 36171 (2016)
Yu JC, Zhao FG, Shao W, Ge CW, Li WS, Nanoscale, 7, 8811 (2015)
Lee JW, Han J, Lee DS, Bae S, Lee SH, Lee SK, Moon BJ, Choi CJ, Wang G, Kim TW, Small, 14, 170331 (2018)
Xiong YJ, Xia YN, Adv. Mater., 19(20), 3385 (2007)
Fan N, Xu LQ, Li J, Ma XC, Qian YT, J. Cryst. Growth, 299(1), 212 (2007)
Li X, Go M, Lim S, An TK, Jeong YJ, Kim SH, Org. Electron., 73, 279 (2019)
Smith JN, Flagan RC, Beauchamp JL, J. Phys. Chem. A, 106(42), 9957 (2002)
Cui LK, Zhang J, Zhang X, Huang L, Wang Z, Li Y, Gao H, Zhu S, Wang T, Yang B, ACS Appl. Mater. Interfaces, 4, 2775 (2012)
Li X, Lee GS, Park SH, Kong H, An TK, Kim SH, Org. Electron., 62, 357 (2018)
Kim K, Bae J, Noh SH, Jang J, Kim SH, Park CE, J. Phys. Chem. Lett., 8, 5492 (2017)
Liu SH, Balankura T, Fichthorn KA, Phys. Chem. Chem. Phys., 18, 32753 (2016)
Li X, Jung EM, Kim KS, Oh JH, Ah TK, Lee SW, Kim SH, Electron. Mater. Lett., 15, 595 (2019)
Jeong YJ, Lee X, Bae J, Jang J, Joo SW, Lim S, Kim SH, Park CE, J. Mater. Chem. C, 4, 4912 (2016)
Jose SP, Kumar P, Bapat C, Gupta A, Tripathi J, Katiyar M, Mohapatra YN, The Physics of Semiconductor Devices, Springer International Publishing, Cham, pp.75 2019.
Liu C, Xu Y, Noh YY, Mater. Today, 18, 79 (2015)
Jang J, Park J, Nam S, Anthony JE, Kim Y, Kim KS, Kim KS, Hong BH, Park CE, Nanoscale, 5, 11094 (2013)
Park H, Ahn H, Kwon J, Kim S, Jung S, ACS Appl. Mater. Interfaces, 10, 37767 (2018)
Choi D, Ahn B, Kim SH, Hong K, Ree M, Park CE, ACS Appl. Mater. Interfaces, 4, 117 (2012)
Fritz SE, Kelley TW, Frisbie CD, J. Phys. Chem. B, 109(21), 10574 (2005)
Kwon HJ, Ye H, An TK, Hong J, Park CE, Choi Y, Shin S, Lee J, Kim SH, Li X, Org. Electron., 105391 (2019).
Kaimakamis T, Pitsalidis C, Papamichail A, Laskarakis A, Logothetidis S, RSC Adv., 6, 97077 (2016)
Kwon HJ, Kim KH, An TK, Kim SH, Park CE, J. Ind. Eng. Chem., 75, 187 (2019)

[1] Venugopal G, Kim SJ, Nanolithography, 187 (2013).

[2] Dang MC, Dang TMD, Fribourg-Blanc E, Adv. Nat. Sci. Nanosci. Nanotechnol, 4, 015009 (2013)

[3] Raut NC, Al-Shamery K, J. Mater. Chem. C, 6, 1618 (2018)

[4] Singh M, Haverinen HM, Dhagat P, Jabbour GE, Adv. Mater., 22(6), 673 (2010)

[5] Park JU, Hardy M, Kang SJ, Barton K, Adair K, Mukhopadhyay DK, Lee CY, Strano MS, Alleyne AG, Georgiadis JG, Ferreira PM, Rogers JA, Nat. Mater., 6, 782 (2007)

[6] Kim K, Kim G, Lee BR, Ji S, Kim SY, An BW, Song MH, Park JU, Nanoscale, 7, 13410 (2015)

[7] Kim SY, Kim K, Hwang YH, Park J, Jang J, Nam Y, Kang Y, Kim M, Park HJ, Lee Z, Choi J, Kim Y, Jeong S, Bae BS, Park JU, Nanoscale, 8, 17113 (2016)

[8] Li X, Jeong YJ, Jang J, Lim S, Kim SH, Phys. Chem. Chem. Phys., 20, 1210 (2018)

[9] Maktabi S, Chiarot PR, J. Appl. Phys., 120, 084903 (2016)

[10] Cloupeau M, J. Aerosol Sci., 25, 1143 (1994)

[11] Bae J, Lee J, Kim SH, J. Appl. Polym. Sci., 134, 45044 (2017)

[12] Li X, Kim K, Oh H, Moon HC, Nam S, Kim SH, Org. Electron., 69, 190 (2019)

[13] Cui Z, Han Y, Hunag Q, Dong J, Zhu Y, Nanoscale, 10, 6806 (2018)

[14] Samarasinghe SR, Pastoriza-Santos I, Edirisinghe MJ, Reece MJ, Liz-Marzan LM, Gold Bulletin, 39, 48 (2006)

[15] Niittynen J, Sowade E, Kang H, Baumann RR, Mantysalo M, Sci. Rep., 5, 8832 (2015)

[16] Ye S, Stewart IE, Chen Z, Li B, Rathmell AR, Wiley BJ, Accounts Chem. Res., 49, 442 (2016)

[17] Wei C, Liu Q, Cryst. Eng. Comm., 19, 3254 (2017)

[18] Ajitha B, Reddy YAK, Reddy PS, Jeon HJ, Ahn CW, RSC Adv., 6, 36171 (2016)

[19] Yu JC, Zhao FG, Shao W, Ge CW, Li WS, Nanoscale, 7, 8811 (2015)

[20] Lee JW, Han J, Lee DS, Bae S, Lee SH, Lee SK, Moon BJ, Choi CJ, Wang G, Kim TW, Small, 14, 170331 (2018)

[21] Xiong YJ, Xia YN, Adv. Mater., 19(20), 3385 (2007)

[22] Fan N, Xu LQ, Li J, Ma XC, Qian YT, J. Cryst. Growth, 299(1), 212 (2007)

[23] Li X, Go M, Lim S, An TK, Jeong YJ, Kim SH, Org. Electron., 73, 279 (2019)

[24] Smith JN, Flagan RC, Beauchamp JL, J. Phys. Chem. A, 106(42), 9957 (2002)

[25] Cui LK, Zhang J, Zhang X, Huang L, Wang Z, Li Y, Gao H, Zhu S, Wang T, Yang B, ACS Appl. Mater. Interfaces, 4, 2775 (2012)

[26] Li X, Lee GS, Park SH, Kong H, An TK, Kim SH, Org. Electron., 62, 357 (2018)

[27] Kim K, Bae J, Noh SH, Jang J, Kim SH, Park CE, J. Phys. Chem. Lett., 8, 5492 (2017)

[28] Liu SH, Balankura T, Fichthorn KA, Phys. Chem. Chem. Phys., 18, 32753 (2016)

[29] Li X, Jung EM, Kim KS, Oh JH, Ah TK, Lee SW, Kim SH, Electron. Mater. Lett., 15, 595 (2019)

[30] Jeong YJ, Lee X, Bae J, Jang J, Joo SW, Lim S, Kim SH, Park CE, J. Mater. Chem. C, 4, 4912 (2016)

[31] Jose SP, Kumar P, Bapat C, Gupta A, Tripathi J, Katiyar M, Mohapatra YN, The Physics of Semiconductor Devices, Springer International Publishing, Cham, pp.75 2019.

[32] Liu C, Xu Y, Noh YY, Mater. Today, 18, 79 (2015)

[33] Jang J, Park J, Nam S, Anthony JE, Kim Y, Kim KS, Kim KS, Hong BH, Park CE, Nanoscale, 5, 11094 (2013)

[34] Park H, Ahn H, Kwon J, Kim S, Jung S, ACS Appl. Mater. Interfaces, 10, 37767 (2018)

[35] Choi D, Ahn B, Kim SH, Hong K, Ree M, Park CE, ACS Appl. Mater. Interfaces, 4, 117 (2012)

[36] Fritz SE, Kelley TW, Frisbie CD, J. Phys. Chem. B, 109(21), 10574 (2005)

[37] Kwon HJ, Ye H, An TK, Hong J, Park CE, Choi Y, Shin S, Lee J, Kim SH, Li X, Org. Electron., 105391 (2019).

[38] Kaimakamis T, Pitsalidis C, Papamichail A, Laskarakis A, Logothetidis S, RSC Adv., 6, 97077 (2016)

[39] Kwon HJ, Kim KH, An TK, Kim SH, Park CE, J. Ind. Eng. Chem., 75, 187 (2019)