The electrochemical capacitance-voltage (ECV) technique was used to measure the carrier concentration profiles in Si. Using the conventional parallel-equivalent circuit model of the Schottky junction to describe the electrolyte-silicon barrier we found excellent agreement between ECV and four-point probe analyses within +/-10 to 20% for bulk Si uniformly doped p- and n-type from 10(12) to 10(18) cm(-3). In this concentration range accuracy limits are determined mainly by the precise measurement of the area of the electrolyte-Si contact. For the anodic etching of Si, a constant effective dissolution valence of z = 3.7 was used throughout the measurements. investigations with isotype and anisotype doping transitions were performed employing ECV and other profiling techniques for comparison.