A direct liquid coinjection system has been applied to the chemical vapor deposition of copper using the commercially available Cu(I)precursor (hfac)Cu(TMVS), where hfac = 1,1,1,5,5,5-hexafluoroacetylacetonate and TMVS = trimethylvinylsilane. Precursor delivery was enhanced through the use of a coinjection system wherein additional TMVS was mixed with the copper precursor before injection into the vaporization chamber. The results reported here demonstrate the capability of depositing blanket copper of high purity (on the order of 99.99% copper) and low resistivity (1.85 +/- 0.1 mu Omega-cm). These copper films have been deposited at rates up to and exceeding 1500 Angstrom/min. The effects of temperature and carrier gas on deposition rate and resistivity are examined, The as-deposited films demonstrate a dependence of grain size with thickness and little structural or morphological change with annealing. This study suggests that liquid coinjection is an effective method for enhancing deposition rates and for producing high quality copper films from copper(I) precursors.