P-doped SiC film is grown by low pressure chemical vapor deposition using the CH3SiH3/PH3 gas system. The stoichiometric SiC is grown on an Si substrate at a temperature of 973 K (700 degrees C). PH3 gas is injected during growth and a highly P-doped (similar to 10(21) atom/cm(3)) SiC film is obtained. Decreased growth temperature suppresses generation of defects in the Si substrate and makes a smooth interface between the Si and the SiC crystals. Such improvements in hetero structure, fabricated at a growth temperature of 973 K, allow P(Si)-n(SiC) hetero-junctions with low leakage current.