Etching of gold films using chlorine gas was investigated using a parallel plate reactive ion etching machine. Etch rates of 4400 to 9800 Angstrom min(-1) were achieved with power levels of 200 to 400 W and pressures of 50 to 100 mTorr. The gold film was patterned with an SiO2 mask. The lower electrode and sample were heated to 125 degrees C. Under these conditions the etch was anisotropic with no undercutting and no redeposition of gold on the sample. Linewidths as small as 0.5 mu m and etch depths of 5 mu m were produced.