The radio frequency magnetron sputtering technology (RFMS) was employed to deposit perovskite structure orthogonal phase CaZrO3 thin films on Pt/Ti/SiO2/Si substrates. The effects of substrate temperatures on structure and electrical properties of these films were investigated in detail. The CaZrO3 thin films were systematically characterized by means of X-ray diffraction (XRD), Scanning electron microscope (SEM), Multi-frequency LCR meter (HP4294A) and Radiant Precision Workstation to study the phase structure, cross-section morphology, dielectric and ferroelectric properties at different substrate temperatures. The result indicates that these films can withstand 80 V DC Bias voltage and have excellent stability of frequency, voltage and temperature. The CaZrO3 thin film prepared at 550 degrees C turned out to be mainly orthorhombic CaZrO3 phase with high permittivity, low dielectric loss, extremely low leakage current (at 1 MHz, the dielectric constant is 39.42, the dielectric loss is 0.00455, the quality factor is 220 and the leakage current density is 9.11 x 10(-7) A/cm(2) at 80 V applied voltage.). This work demonstrates that higher substrate temperature can boost the formation of orthorhombic CaZrO3 phase and the CaZrO3 thin film prepared by RF magnetron sputtering is a very promising paraelectric material in the application of thin film capacitor.