A self-aligned silicidation scheme for a submicron complementary metal oxide semiconductor process with three different types of poly-Si gate doping is discussed. High temperature (730 degrees C) rapid thermal processing of a Ti layer capped with TiN was found to yield the stable C54 material phase. TiSi2 formed on moderately doped mono- and poly-Si can withstand aggressive environments of low pressure chemical vapor deposited tetraethylorthosilicate deposition, while the films formed on more heavily doped substrates were found to require additional stabilization at higher temperatures.