During studies of the alternating cyclic, A.C., technique for the selective epitaxial growth of silicon, lateral epitaxial overgrowth (ELO) structures were observed following non A.C, reference depositions in a low pressure hot wall system. Experiments were conducted at 2.5 Torr, 950 degrees C, H-2/SiCl4 = 50, Ar/H-2 = 9, with H-2 = 2 slpm, SiCl4 = 0.04 slpm, and Ar = 18 slpm. Patterned 0.22 to 0.35 mu m thermal oxide covered silicon substrates with the oxide coverage ranging from 10 to 70% were employed. It was found that if the growth conditions and the oxide mask and exposed silicon opening sizes are properly chosen, void-free ELO structures are obtainable.