Journal of the Electrochemical Society, Vol.142, No.8, 2844-2848, 1995
Oxygen-Transport Mechanism in Czochralski Silicon Melt .2. Vicinity of Growth Interface
The mechanism governing oxygen transport in the vicinity of the growth interface with varying rates of crystal rotation was investigated both experimentally and computationally. Rotation induces a sweeping flow out of-high oxygen content melt contributing to uniform radial oxygen concentration. At low rates of rotation, low oxygen content melt flows into the growth interface region, rarefying the oxygen concentration at the boule periphery and affecting the longitudinal micro-oxygen distribution. Calculation verified the correlation between radial velocity and oxygen fluctuation, that fluctuation within the crystal is attributable to the now of low oxygen content melt from the free surface. At higher rotational speeds, radial outflow obstructs flow from free surface, resulting in a relatively uniform longitudinal micro-oxygen distribution within the boule.