A comprehensive study of the deposition kinetics of SiC films from methyltrichlorosilane (MTS) at subambient presures is presented. A hot-wall reactor, coupled with an electronic microbalance, has been used to gravimetrically investigate the dependence of the deposition rate on temperature, pressure, flow rate, and feed composition in a relatively broad region of experimental conditions : 775-1075 degrees C temperature, 20-600 Torr pressure 100-400 cm(3)/min flow rate, and 0.025-0.33 MTS mole fraction in the feed. Deposition rate data are presented at different locations in the deposition reactor, and results on composition and morphology are reported. The results are discussed and qualitatively explained in the context of past experimental and theoretical studies on SiC deposition and NITS decomposition.