An atmospheric pressure cold wall reactor was designed and built for the purpose of studying the thermal decomposition of Cu(hfa)(2) as a repair technique for broken copper interconnection lines, using thermally biased substrates, and a laser to heat localized areas to a temperature appropriate for the deposition of pure copper. In this paper, a discussion of the design is presented, and theoretical and experimental blanket copper deposition growth rates in argon and forming gas are discussed. The primary goals of the present work were the design of the system, the determination of blanket growth rate characteristics, and examination of the tendency for "natural selectivity" to occur on two contiguous dielectric materials, SiO2 and polyimide. In studies of natural selectivity, deposition was observed on SiO2, but not on contiguous polyimide at substrate temperatures of 340 degrees C down to 270 degrees C or lower, using argon as a carrier/diluent, and from 270 degrees C down to 150 degrees C, using argon/hydrogen mixtures (9:1) as a carrier/diluent.