The defect formation in cadmium telluride thin films when growing from the vapor phase by a hot-wall epitaxy method has been described with the help of quasi-chemical reactions. The analytical expressions of the dependences of concentration of free charge carriers and dominant intrinsic atomic defects on the technological factors (substrate temperature (S), evaporation temperature (E) and partial vapor pressure of cadmium ) have been obtained. It has been shown that the concentration of free charge carriers in CdTe films is determined by vacancies of cadmium and tellurium.