Quantum dots (QDs) are one of the promising materials in the development of third-generation photovoltaics. QDs have the advantage of multiple exciton generation (MEG), high absorption coefficient and tuneable bandgap, low cost and easy synthesis. The QDs act as analogues to dye molecules in QD sensitized solar cells (QDSSCs) when compared with traditional dye-sensitized solar cells (DSSCs). Extending the absorption range of quantum dots is one of potential solutions for enhancing photoconversion efficiencies. The sensitization of SnSe quantum dots on theTiO(2) mesoporous layers is carried by a successive ionic layer adsorption and reaction (SILAR) method in a glove box. The advantages of SILAR method are a high loading rate and wide coverage of the TiO2 matrix by the quantum dots. The device has exhibited a photoconversion efficiency of 0.78% which is the known best among the SnSe quantum dot-based solar cells.