High Pr(20 mu C/cm(2)) Pb(Zr, Ti)O-3/RuO2 multilayer thin films were fabricated on (100) Si substrates by a spin-on technique. The grain structure and the resistivities of the RuO2 films were found to be related to each other, with both properties being controlled by the firing schedules of the films. The crystallinity of the Pb(Zr, Ti)O-3 films were seriously influenced by the surface morphology of the RuO2/Si substrates. The best crystalline Pb(Zr, Ti)O-3 films occurred when the substrate was RuO2 with root mean square roughness of 8 nm. An optimized Pb(Zr, Ti)O-3 capacitor with an RuO2 film as a bottom electrode showed good fatigue property.