We report the successful use of di-n-cyclopentadienyl manganese [(C5H5)(2)Mn] as a manganese dopant for ZnS films, fabricated by low-pressure metallorganic chemical vapor deposition onto an indium-tin oxide coated glass substrate. The substrate temperature was 225 degrees C. The concentration of manganese in the films was studied as a function of a (C5H5)(2)Mn bubbler temperature. The crystallinity and morphology of the films were examined by x-ray diffraction and atomic force microscopy. The grain size was 43 nm, as evaluated by the Debye-Scherrer relation. ZnS:Mn ac thin film electroluminescent devices with a double insulating layer structure were prepared. The luminance exceeded 1500 cd/m(2), which is higher than the previously reported value of 680 cd/m(2), employing the same Mn source.