The solid phase diffusion of boron into silicon from an ultrathin boron-doped silicate glass (BSG) by rapid thermal processing (RTP) is a candidate to replace ion implantation for silicon doping in sub-0.1 mu m p-metal oxide semiconductor field-effect transistor devices. The effects of process parameters for subatmospheric CVD BSG deposition and RTP integration are presented. The optimum process conditions were identified for BSG film deposition. After RTP, the doping profile could be independently controlled by source BSG concentration, RTP temperature, and time. Spreading resistance analysis shows that p-type carrier concentration profile in the Si substrate ranged from 10(17) to 10(20) cm(-3) at depths less than 0.1 mu m.