Journal of the Electrochemical Society, Vol.144, No.7, 2504-2508, 1997
On Anomalous Behavior of Dopant Diffusion-Coefficients at Very High-Concentrations
It is shown that the unusual shape of the effective dopant diffusion coefficient at very high concentrations, displaying a peak followed in some cases by a minimum and another increase, is directly connected with the existence of solubility limits of dopant-related defects, such as donors, clusters, and precipitates.
Keywords:SI POINT-DEFECTS;ISOCONCENTRATION DIFFUSION;SOLUBILITY LIMIT;TIME-DEPENDENCE;SILICON;PHOSPHORUS;FILMS;ZINC;GAAS