A reliable and reproducible copper deposition process using the chemical vapor deposition technique has been successfully developed using hexafluoroacetylacetone-based precursors. Effects of various process conditions such as temperature, distance from the wafer to the shower head, liquid precursor flow, etc., have been studied. Low resistivity (<2 mu Omega cm), high deposition rate (>200 nm/min), good adhesion, and good gap fill are routinely achieved. The quality copper film has <1% variation within 25 wafer batches for more than 500 wafers tested. The resulting copper deposition process is considered ready for integration into a manufacturing line.