Pure platinum films were deposited onto SiO2 (100 nm)/Si using MeCpPtMe3 and oxygen by metallorganic chemical vapor deposition. Platinum deposition was controlled by gas-phase mass transfer with an apparent activation energy of 2.2 kcal mol(-1) within the temperature range 300 to 450 degrees C. Hole formation at grain edges depended on the deposition temperature and the oxygen now rates which increased film resistivity. Uniform platinum films without holes could be obtained at oxygen flow rate of 40 seem and a deposition temperature of 350 degrees C. A platinum bottom electrode deposited at 300 degrees C showed a stable and uniform state after deposition of SrBi2Ta2O9 (SBT) ferroelectric thin films at 600 degrees C by plasma-enhanced metallorganic chemical vapor deposition.