Arsenic was implanted into silicon to doses of approximately 10(14) cm(-2) using energies of 0.5, 1, and 5 keV. The corresponding depth profiles were examined using time of flight secondary ion mass spectrometry (ToF-SIMS) and total reflection x-ray fluorescence spectrometry (TXRF). With the exception of the first few,nanometers, TXRF was not able to measure an extended profile with reasonable resolution. However, because of the easy and exact quantification of the technique, TXRF was used for the determination of the As doses. in addition, TXRF was applied to correct the original SIMS profiles for the near-surface zone because of the excellent depth profiling capability for the first few nanometers. SIMS and TXRF provide complementary information and therefore the most reliable results were obtained using the two techniques in combination.