화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.145, No.1, L4-L8, 1998
Fabrication of Ag/Y2O3-stabilized ZrO2 composite films by metallorganic chemical vapor deposition
Composite films of Ag and Y2O3-stabilized ZrO2 have been prepared by simultaneous metallorganic chemical vapor deposition (MOCVD) of the metal and ceramic. Aerosol-assisted precursor delivery of a toluene solution of the precursors Zr(tfac)(4), Y(hfac)(3), and (hfac)Ag(C4H8OS)(2) was used to deposit films with Ag volume fractions ranging from 0.007 to 0.60 (hfac = hexafluoroacetylacetonate, tfac = trifluoroacetylacetonate). Film morphology and room-temperature resistivity varied with Ag content. Resistivities for Ag volume fractions above 0.30 were consistent with typical granular composite films; however, at Ag volume fractions below 0.10, much lower resistivities were found than are typically reported. The percolation behavior of the films is analyzed and possible explanations for the resistivity results are discussed.