Oxynitrides were grown by constant current anodization of silicon in a N2O plasma. The effects of process conditions such as reactor pressure, flow rate, substrate temperature, and current density on the incorporated nitrogen bonding chemistry, concentration, and spatial distribution were studied using angle-resolved X-ray photoelectron spectra of the as-grown, etched-back (4.5 nm), and annealed oxynitrides. Current-voltage and capacitance-voltage characteristics of the oxynitrides were evaluated. Compared to a reference oxynitride grown at 350 degrees C, 30 mTorr; 10 seem, and 3.8 mA/cm(2), an increase in substrate temperature (to 400 degrees C) and current density (to 5 mA/cm(2)) along with reactor pressure changes (to 15 and 50 mTorr) favored the incorporation of nitrogen in a N-Si-3, bonding structure over SiOxNy bonding structures near the Si-SiO2, interfacial region. A pressure of 15 mTorr and a flow rate of 25 seem, which result In lower residence times, and a temperature of 400 degrees C, yielded lower nitrogen concentrations (approximate to 0.6 to 1 atom %). Oxynitrides with nitrogen in a N-Si-3 bonding structure at the Si-SiO2 interfacial region, in atomic concentrations of approximate to 1%, exhibited the highest breakdown fields. Fixed oxide charges were low : with the oxynitride grown at 400 degrees C having the lowest charge level at 8.5 x 10(10) charges/cm(2).