YAG 상함량에 따른 YAS (Y2O3-Al2O3-SiO2)계 코팅층의 내플라즈마 특성

박의근; 이현권; Eui Keun Park; Hyun-Kwuon Lee

Korean Journal of Materials Research, Vol.30, No.11, 621-626, November, 2020

DOI10.3740/MRSK.2020.30.11.621 Export Citation

YAG 상함량에 따른 YAS (Y2O3-Al2O3-SiO2)계 코팅층의 내플라즈마 특성

Plasma Resistance of YAS (Y2O3-Al2O3-SiO2) Coating Layer with YAG Phase Contents

박의근, 이현권 ^†

금오공과대학교 신소재공학과

Eui Keun Park, and Hyun-Kwuon Lee^†

Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea

E-mail:

This study is aimed at preparing and evaluating the plasma resistance of YAS (Y2O3-Al2O3-SiO2) coating layer with crystalline YAG phase contents. For this purpose, YAS frits with controlled phase contents are prepared and melt-coated on sintered Al2O3 ceramics. Then, the results of phase analysis of crystalline YAS coating layer are compared to that of YAS frits, and discussed with regard to the plasma resistance of the YAS coating layer. The phase contents of the YAS frit change in a manner different from that of the prepared YAS coating layer, presumably owing to the composition change of YAS frit during the melt-coating process. The plasma resistance of the YAS coating layer is shown to increase with the YAG phase contents in the coating layer. Comparing the weight loss of YAS coating layer with those of commercial Y2O3, Al2O3, and quartz ceramics, the plasma resistance of the prepared YAS coating layer is 8 times higher than that of quartz and 3 times higher than that of Al2O3; this layer shows 70 % of the resistance of Y2O3.

Keywords:plasma resistance;coating;YAS (Y2O3-Al2O3-SiO2);YAG

[References]

May GS, Spanos CJ, Fundamentals of Semiconductor Manufacturing and Process Control, p.98, John Wiley & Sons, Inc., New Jersey (2006).
Wilkinson DCW, Deng L, Rahman M, Jpn. J. Appl. Phys., 41, 4261 (2002)
Kim DM, Yoon SY, Kim KB, Kim HS, Oh YS, Lee SM, J. Korean Ceram. Soc., 45, 707 (2008)
Kim DM, Oh YS, Kim S, Kim HT, Lim DS, Lee SM, Thin Solid Films, 519(20), 6698 (2011)
Lee JK, PArk SJ, Oh YS, Kim S, Kim H, Lee SM, Surf. Coat. Technol., 309, 456 (2017)
Kim KB, Kim D, Lee J, Oh YS, Kim HT, Kim H, Lee SM, J. Korean Ceram. Soc., 46, 456 (2009)
Qin X, Zhou G, Yang H, Wong JI, Zhang J, Luo D, Wang S, Ma J, Tnag D, Ceram. Int., 38, 2529 (2012)
Park SJ, Kim HS, Lee SM, Korean J. Mater. Res., 27(12), 710 (2017)
Park EK, Lee HK, Korean J. Mater. Res., 30(7), 359 (2020)
Shah B, Kakumanu VK, Bansal AK, J. Pharmaceut. Sci., 95, 1641 (2006)
Anantharaman SB, Rajkumar VB, Raghunandan S, Kumar KCH, Kumar RS, Gandhi AS, J. European Ceram. Soc., 37, 5001 (2017)
Shelby JE, Introduction to Glass Science and Technology, 2nd ed., p. 11, RSC, UK (2005).
Yeom GY, Plasma Etching Technology (in Korean), p.249, YOUNG, Korea (2006).

[Related Articles]

[1] May GS, Spanos CJ, Fundamentals of Semiconductor Manufacturing and Process Control, p.98, John Wiley & Sons, Inc., New Jersey (2006).

[2] Wilkinson DCW, Deng L, Rahman M, Jpn. J. Appl. Phys., 41, 4261 (2002)

[3] Kim DM, Yoon SY, Kim KB, Kim HS, Oh YS, Lee SM, J. Korean Ceram. Soc., 45, 707 (2008)

[4] Kim DM, Oh YS, Kim S, Kim HT, Lim DS, Lee SM, Thin Solid Films, 519(20), 6698 (2011)

[5] Lee JK, PArk SJ, Oh YS, Kim S, Kim H, Lee SM, Surf. Coat. Technol., 309, 456 (2017)

[6] Kim KB, Kim D, Lee J, Oh YS, Kim HT, Kim H, Lee SM, J. Korean Ceram. Soc., 46, 456 (2009)

[7] Qin X, Zhou G, Yang H, Wong JI, Zhang J, Luo D, Wang S, Ma J, Tnag D, Ceram. Int., 38, 2529 (2012)

[8] Park SJ, Kim HS, Lee SM, Korean J. Mater. Res., 27(12), 710 (2017)

[9] Park EK, Lee HK, Korean J. Mater. Res., 30(7), 359 (2020)

[10] Shah B, Kakumanu VK, Bansal AK, J. Pharmaceut. Sci., 95, 1641 (2006)

[11] Anantharaman SB, Rajkumar VB, Raghunandan S, Kumar KCH, Kumar RS, Gandhi AS, J. European Ceram. Soc., 37, 5001 (2017)

[12] Shelby JE, Introduction to Glass Science and Technology, 2nd ed., p. 11, RSC, UK (2005).

[13] Yeom GY, Plasma Etching Technology (in Korean), p.249, YOUNG, Korea (2006).